Synthesis, characterization and optoelectronic application of Bi2Se3 thin film prepared by thermal evaporation technique

Recently, semiconducting transition metal chalcogenides (TMCs) have shown great potential for applications in the field of optoelectronics owing to their strong light absorption in broad spectral range. Photodetectors based on layered TMCs have captivated tremendous attention for the substitute of the silicon based materials. Herein, we demonstrate the fabrication of large area photodetector based on thermally evaporated Bi2Se3 thin film for visible light detection. This thin film has thickness of 5000 Å and highly crystalline structure with (006) prominent orientation. Photodetector based on Bi2Se3 thin film shows excellent light sensitivity in broad spectral range from 485 to 670 nm. The photocurrent of as high as 50.96 μA and photo responsivity of 2.12 mA/W are achieved under white light of 100 mW/cm2 power intensity. Additionally, the photodetector shows excellent stability towards pulse photoresponse for large number of cycles of light pulse owing to stable nature of Bi2Se3 thin film. Present study reports the development of Bi2Se3 thin film as light harvesting materials for futuristic opto-electronic devices for pollution free energy by utilizing Sun-light.