Blue LED (InGaN)-driven yellow and red emitting phosphor for white light generation

Phosphor converted white LED using a yellow and red emitting material is investigated. For this we prepare K2SiF6:Mn4+ as red emitting phosphor via wet chemical technique. The white LED (w-LED) fabricated using blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ and K2SiF6:Mn4+ phosphor. The effect of K2SiF6:Mn4+ phosphor as red emitting material in combination with blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ phosphor is also investigated. The Commission International de I’Eclairage (CIE) coordinates and color rendering index (CRI) were also studied as a function of K2SiF6:Mn4+ content. The w-LED fabricated using blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ and K2SiF6:Mn4+ phosphor shows a CIE value (x = 0.31, y = 0.33) with 78.1 CRI.