自旋电子学
材料科学
居里温度
磁矩
凝聚态物理
铁磁性
磁性
磁性半导体
兴奋剂
掺杂剂
单层
带隙
过渡金属
半导体
纳米技术
光电子学
化学
物理
生物化学
催化作用
作者
Ruifang Xue,Rong Han,Xiang Lin,Peng Wu
标识
DOI:10.1016/j.apsusc.2022.155240
摘要
In this paper, we comprehensively investigate the structural, electronic, and magnetic properties of 3d transition metal (TM, from Sc to Zn) doped InS nanolayers with and without strain using first-principles calculations. The structural optimization and formation energy results show that all configurations considered are reasonable. Additionally, TM doping has successfully implanted magnetism into InS material due to the efficient orbital hybridization of p-d exchange, except for the Sc- and Cu-doped systems. The Curie temperature of the short-range configuration of Cr-doped InS is 590.21 K, which is expected to achieve room temperature ferromagnetism. The value of the bandgap of pristine InS reaches a maximum at the application of −6% strain and transforms into a direct bandgap semiconductor. Under the condition of the coexistence of dopants and biaxial strain, the properties of magnetic semiconductors of Cr-doped systems are retained, and the tunable range of magnetic moments is significantly increased. Ni- and Zn-doped InS under the strain of 8 % become metallic materials and the magnetic moments were reduced to 1.15 μB and 0.39μB, respectively. This work paves the way for the application of InS-based materials in 2D spintronic devices.
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