Growth of cubic InxGa1-xN over whole composition by MBE

Cubic In_xGa_1-xN alloys are a candidate material for optoelectronic applications because they lack internal polarization fields and promise to cover a vast range of emission wavelengths. However, the large discrepancy in interatomic spacing and growth temperatures of c-GaN and c-InN hinder In_xGa_1-xN-growth. We report cubic In_xGa_1-xN layers grown by plasmaassisted MBE and achieve continuous miscibility of the indium content x(In) over the whole composition range. X-ray diffraction precisely monitors the composition, phase purity and miscibility of the thin films. Furthermore, we discuss the impact of the indium content on the crystallinity. Complementary, low-temperature photoluminescence studies elucidate the optical response of cubic In_xGa_1-xN layers.