Dependence of Si/sub 3/N/sub 4/ film properties on precursor chemistry

Silicon nitride films are used as oxidation barriers, mobile ion barriers, hard masks and capacitor dielectrics in integrated circuit manufacturing. Properties of silicon nitride layers are characterized relative to physical, optical, chemical and electrical aspects that pertain to specific applications. The process integration of silicon nitride within a device structure depends upon uniformity and controllability of the deposition conditions. Precursors used in the silicon nitride deposition reaction will affect stoichiometry and reaction rates. The trisilylamine (TSA) precursor is compared to standard dichlorosilane (DCS) in terms of performance parameters