High temperature performance of self-organised quantum dot laser with stacked p-doped active region

A stacked p-doped quantum dot active region is used to obtain a high characteristic temperature in GaAs-based 1.3 µm lasers. A characteristic temperature of 232 K (213 K) is obtained between 0 and 81°C for pulsed (continuous-wave) operation for lasers with 0.97 mm cavity length and five stacks of quantum dot layers. The room-temperature continuous-wave output power for a 0.65 mm cavity length reaches 27 mW with a 5.7 mA threshold.