凝聚态物理
物理
费米面
布里渊区
电阻率和电导率
超导电性
量子力学
作者
Sharon S. Philip,Shunshun Liu,Jeffrey C. Y. Teo,Prasanna V. Balachandran,Despina Louca
出处
期刊:Physical review
[American Physical Society]
日期:2023-01-24
卷期号:107 (3)
被引量:3
标识
DOI:10.1103/physrevb.107.035143
摘要
Characteristics of topological semimetals such as a nonsaturating magnetoresistance (MR), a field-induced metal to semiconducting crossover and a robust resistivity plateau are observed under a magnetic field in type-I RbBi<sub>2</sub> bulk superconductor with $\\mathrm{T}$<sub>c</sub> = 4.15 K. The MR exhibits a notable 3500% increase at 2 K and 9 T and the resistivity follows a power law temperature dependence, while the MR ∝ $\\mathrm{H}$<sup>1.26</sup>, indicating weak carrier compensation. Further, first principles calculations provided insights into the dynamical stability of the cubic structure at 0 K. Both hole and electron pockets are observed at the Fermi surface. The electron-phonon interaction constant indicates weak coupling strength (<1) that leads to a maximum predicted $\\mathrm{T}$<sub>c</sub> of 2.852 K. Just below the Fermi level, E<sub>F</sub>, the electronic band structure consists of linear band crossings at the $\\mathrm{X}$ points in the Brillouin zone (BZ) corresponding to massless, symmetry-protected Dirac fermions.
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