Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications

Abstract In the present work, a maximum gain amplifier was designed at 3 GHz using the proposed device, i.e. a split-stacked recessed gate β-Ga2O3 metal–oxide–semiconductor field-effect transistor. Extensive simulations were performed using TCAD Silvaco to investigate the analog and RF metrics of the proposed device. It was demonstrated that the proposed device exhibits a 8× times higher cutoff frequency along with a 6× times higher gain bandwidth product and a 3× times higher transconductance frequency product as compared to conventional devices. Furthermore, the parasitic capacitance, scattering parameters, maximum current and power gain were been extracted, and a maximum gain amplifier was designed. It is demonstrated that the amplifier exhibits a gain value of 14.02 dB at 3 GHz.