High uniformity red µ-LED array with a current efficiency of 2.6 cd/A and ns-level response time

This paper demonstrates an AlGaInP-based 620-nm red micro-light-emitting-diode (µ-LED) array and studies the enhancement effect of the surface treatments using (NH 4 ) 2 S x solutions by comparing the characteristics of µ-LED arrays with and without the (NH 4 ) 2 S x treatment. Furthermore, our µ-LED array demonstrates a measurement of the current efficiency (2.6 cd/A), which improves the light output uniformity. Also, we apply a setup for measuring the response time at the fast ns-level to analyze the effect of passivation in AlGaInP-based µ-LED arrays.