TCAD Simulation Models, Parameters, and Methodologies for β-Ga 2 O 3 Power Devices

β -Ga 2 O 3 is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Since β -Ga 2 O 3 technology is still not mature, experimental study of β -Ga 2 O 3 is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations of β -Ga 2 O 3 devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga 2 O 3 diode, Schottky diode, and normally-off Ga 2 O 3 vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study of β -Ga 2 O 3 devices using TCAD.