Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma

Photoresist ashing is one of the most common processing steps in semiconductor manufacturing. Conventional methods for photoresist ashing are wasteful, cause undesired damage, or lack the high throughput desired by industry. In this study, a large-area, atmospheric-pressure plasma source is studied for photoresist ashing. Etch rates of ∼200 nm/min are achieved using only argon and air, and no damage is introduced onto the underlying substrate. The ability to remove blanket and patterned photoresist films is demonstrated.