Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD

Abstract Ga 2 O 3 is a fast-developing wide band semiconductor for solar-blind ultraviolet photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga 2 O 3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga 2 O 3 films, which exhibited high performance with high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA W −1 , a photo-to-dark current ratio (PDCR) of 3.2 × 10 4 and a detectivity of 3.8 × 10 13 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga 2 O 3 films in the field of high-performance devices.