有效位数
压控振荡器
逐次逼近ADC
化学
计算机科学
物理
电气工程
电容器
光电子学
工程类
电压
CMOS芯片
作者
Zhaokai Liu,Borivoje Nikolić
标识
DOI:10.1109/esserc62670.2024.10719498
摘要
This work presents an eight-way time-interleaved SAR-VCO ADC implemented in the Intel 16 process that operates at $4 \mathrm{GS} / \mathrm{s}$ with 9.1 ENOB resolution. The sub-ADC design combines SAR and time-domain data conversion and uses a ring amplifier for the interstage residue amplification. The ADC achieves SNDR and SFDR of 56.5 dB and 72.9 dB with a Nyquist frequency input. The ADC core occupies $0.36 \mathrm{~mm}^{2}$ and consumes 124.6 mW, yielding the FoM ${ }_{\mathrm{W}}$ and the $\mathrm{FoM}_{\mathrm{S}}$ of $57.1 \mathrm{fJ} /$ conv.-step and 158.4 dB. The implemented ADC is an instance produced by a highly parameterized circuit generator that enables rapid design-space exploration through automated circuit generation.
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