Concept-Proof of Lock-in OBIRCH Application for Three-Dimensional Analysis of Four-Dimensional NAND Flash Memory

Abstract The importance of three-dimensional (3D) localization capability is growing as advanced semiconductor devices go to 3D structures. An algorithm for processing lock-in OBIRCH data was developed especially for 3D/4D memory devices. The concept was tested with a simple test sample, which was confirmed to be capable of generating depth separated images.