Polar Metallicity Controlled by Epitaxial Strain Engineering

Abstract The discovery of polar metal opens the door to incorporating electric polarization into electronics with the potential to invigorate next‐generation multifunctional electronic devices. Especially, electric polarization can be induced by geometric design in non‐polar perovskite oxides. Here, the epitaxial strain exerted on the deposited single‐crystalline NdNiO 3 thin films is systematically varied in both sign and amplitude by choosing substrates with different lattice mismatch. The pseudocubic NdNiO 3 (111) film, which is non‐polar in its bulk state, is induced to be polar under both compressive and tensile strain. The fine‐tuning of epitaxial strain is realized by continuously varying the film thickness using the “thickness‐wedge” growth technique, and from the elucidated thickness dependence, the electric polarization and metallicity can be further optimized. Moreover, transitioning from isotropic to anisotropic epitaxial strain gives rise to an ideal polar metal state in the pseudocubic NdNiO 3 (102) film on an orthorhombic substrate, achieving a remarkably low resistivity of 173 µΩ cm at room temperature. The metal–insulator transition in NdNiO 3 is completely suppressed and the polar metal state becomes the ground state at all temperatures. These results demonstrate alluring possibilities of induction and manipulation of both electric polarization and electric transport properties in functional perovskite oxides by epitaxial strain engineering.