响应度
光电探测器
异质结
光电子学
材料科学
范德瓦尔斯力
光学
物理
量子力学
分子
作者
Changming Yang,Zeyi Liu,Hongjun Cai,Dehui Li,Yu Yu,Xinliang Zhang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-02-25
标识
DOI:10.1021/acsnano.4c14937
摘要
Telecom-band waveguide photodetectors have revealed great potential for optical communication, computing, and light detection and ranging. Traditional silicon-based waveguide photodetectors based on bulk materials suffer from lattice and thermal expansion coefficient mismatch, resulting in the degradation of device performance. Recently, two-dimensional MoTe2 has become an attractive candidate for waveguide photodetectors due to the absence of dangling bonds and strong light-matter interaction. However, the large bandgap and low carrier mobility of MoTe2 pose an obstacle to achieving high responsivity and large bandwidth in the telecom band. Here, we demonstrate a high-speed and high-responsivity vertical graphene-MoTe2-graphene heterostructure photodetector. Benefiting from the strain-induced bandgap manipulation, the device exhibits a high responsivity of 20 mA W–1 in the telecom C-band (∼1550 nm) and a record-high responsivity of 567 mA W–1 in the telecom O-band (∼1310 nm). On the other hand, the vertical heterostructure minimizes the carrier transit path and promises a high 3 dB bandwidth of 4.81 GHz. Thanks to the comprehensive engineering of the band gap and carrier transition, the demonstrated device achieves a record-high responsivity-bandwidth product. This work demonstrates a high-responsivity and high-speed MoTe2 photodetector for telecom-band applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI