Liquid-Metal Interconnects on SiC MOSFETs

This paper uses a below room-temperature Gallium-based liquid-metal paste for chip-level packaging of SiC MOSFETs. All chip critical interconnects (die-attach, topside, and gate connections) are implemented using liquid-metal. We evaluate five liquid-metal packaged SiC MOSFETs against three conventional Solder and Wirebonded SiC MOSFETs. The liquid-metal versions show improved thermal performance and an increased power cycling performance by a factor of 10x. Notably, the liquid-metal pastes are contained without the use of any encapsulation.