Investigation on the Bandgap-Adjustable (Ga1–xInx)2O3 Film Prepared by Magnetron Sputtering

With the continuous development of Ga2O3 ultrawide bandgap material and devices, the demand for Ga2O3-based heterostructure has been increasing in recent years. (Ga1–xInx)2O3 alloy, which boasts an adjustable bandgap, offers greater flexibility in the creation of optoelectronic and microelectronic devices. This paper presents a thorough analysis of (Ga1–xInx)2O3 films fabricated using magnetron cosputtering with Ga2O3 and In2O3 targets. By modifying the sputtering power of the In2O3 target, (Ga1–xInx)2O3 films with the In content ranging from 0 to 0.81 can be produced, which can provide an adjustable bandgap within 4.94–3.42 eV. Meanwhile, the influences of the O2/Ar ratio and annealing temperature on the (Ga1–xInx)2O3 films are analyzed, and a high O2/Ar ratio can enhance the flatness of the film by reducing the oxygen vacancy and increasing its density; a high annealing temperature can improve the crystallization quality of (Ga1–xInx)2O3 films.