Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Abstract We investigate the effects of gamma-ray ( γ -ray) irradiation on an In 0.53 Ga 0.47 As high electron mobility transistor (HEMT). After γ -ray radiation, the irradiated HEMT shows degradation of the maximum transconductance ( g m,max ), the unity current gain cutoff frequency ( f T ), and the maximum oscillation frequency ( f max )—about 12.8%, 18.0%, and 16.9%, respectively—because of an increase in on-resistance (R on ) in In 0.53 Ga 0.47 As HEMTs exposed to high-dose γ -ray radiation. Moreover, we obtain a minimum noise figure (NF min ) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which is a lower value compared to a non-irradiated HEMT; this is because the gate leakage current is reduced after γ -ray irradiation.