CMOS芯片
光电子学
光电探测器
雪崩光电二极管
材料科学
炸薯条
光通信
无线电接收机设计
带宽(计算)
电子工程
光学
物理
电气工程
探测器
工程类
电信
频道(广播)
发射机
作者
Seung-Jae Yang,Jae-Ho Lee,Myung-Jae Lee,Woo‐Young Choi
标识
DOI:10.1109/jlt.2024.3374707
摘要
An 850 nm monolithic optical receiver is realized with the standard 28 nm complementary metal-oxide-semiconductor (CMOS) technology without any process modification or design rule violation. The single-chip optical receiver contains a Si avalanche photodetector (APD) and an underdamped trans-impedance amplifier (TIA) which compensates the Si APD bandwidth limitation. The Si APD characteristics are measured and modeled with an equivalent circuit that accurately emulates the Si APD frequency responses and the noise characteristics. Using this model, the optimal design of the receiver circuit is carried out. The fabricated monolithic optical receiver achieves 20 Gb/s operation.
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