钙钛矿(结构)
扩散
活化能
μ介子
凝聚态物理
μ介子自旋谱学
国家(计算机科学)
Atom(片上系统)
物理
材料科学
化学
原子物理学
物理化学
结晶学
热力学
量子力学
算法
计算机科学
嵌入式系统
作者
T. Ito,Wataru Higemoto,K. Shimomura
出处
期刊:Physical review
[American Physical Society]
日期:2023-12-04
卷期号:108 (22)
被引量:9
标识
DOI:10.1103/physrevb.108.224301
摘要
In positive muon spin rotation and relaxation ($\mu^+$SR) spectroscopy, positive muons ($\mu^+$) implanted into solid oxides are conventionally treated as immobile spin-probes at interstitial sites below room temperature. This is because each $\mu^+$ is thought to be tightly bound to an oxygen atom in the host lattice to form a muonic analogue of the hydroxy group. On the basis of this concept, anomalies in $\mu^+$SR spectra observed in oxides have been attributed in most cases to the intrinsic properties of host materials. On the other hand, global $\mu^+$ diffusion with an activation energy of $\sim$0.1~eV has been reported in some chemically-substituted perovskite oxides at cryogenic temperatures, although the reason for the small activation energy despite the formation of the strong O$\mu$ bond has not yet been quantitatively understood. In this study, we investigated interstitial $\mu^+$ diffusion in the perovskite oxide lattice using KTaO$_3$ cubic perovskite as a model system. We used the $\mu^+$SR method and density functional theory calculations along with the harmonic transition state theory to study this phenomenon both experimentally and theoretically. Experimental activation energies for global $\mu^+$ diffusion obtained below room temperature were less than a quarter of the calculated classical potential barrier height for a bottleneck $\mu^+$ transfer path. The reduction in the effective barrier height could be explained by the harmonic transition state theory with a zero-point energy correction; a significant difference in zero-point energies for $\mu^+$ at the positions in the O$\mu$ bonding equilibrium state and a bond-breaking transition state was the primary cause of the reduction. This suggests that the assumption of immobile $\mu^+$ in solid oxides is not always satisfied since such a significant decrease in diffusion barrier height can also occur in other oxides.
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