Fabrication of a poly( N -vinyl carbazole)/ ϵ -Ga 2 O 3 organic–inorganic heterojunction diode for solar-blind sensing applications

Abstract Herein, a poly( N -vinyl carbazole) (PVK)/ ϵ -gallium oxide ( ϵ -Ga 2 O 3 ) heterojunction device was fabricated by spin coating prepared PVK solution onto a ϵ -Ga 2 O 3 thin film produced by metal-organic chemical vapor deposition. Under 254 nm ultraviolet light, the device shows obvious rectification characteristics of 37 at ±2 V and has a response speed of 0.52 s rise time and 0.11 s decay time at 5 V. Current–voltage measurement confirmed that the prepared device has the potential to become a self-powered photodetector and displays good stability and a fast response speed under various light intensities and different voltages.