咔唑
材料科学
异质结
化学气相沉积
光电子学
旋涂
制作
整改
二极管
紫外线
薄膜
光电探测器
硅烷
开路电压
纳米技术
电压
化学
光化学
医学
替代医学
病理
物理
量子力学
复合材料
作者
Jie Dai,Shan Li,Zeng Liu,Zuyong Yan,Yusong Zhi,Zhenping Wu,Peigang Li,Weihua Tang
标识
DOI:10.1088/1361-6463/abe6ce
摘要
Abstract Herein, a poly( N -vinyl carbazole) (PVK)/ ϵ -gallium oxide ( ϵ -Ga 2 O 3 ) heterojunction device was fabricated by spin coating prepared PVK solution onto a ϵ -Ga 2 O 3 thin film produced by metal-organic chemical vapor deposition. Under 254 nm ultraviolet light, the device shows obvious rectification characteristics of 37 at ±2 V and has a response speed of 0.52 s rise time and 0.11 s decay time at 5 V. Current–voltage measurement confirmed that the prepared device has the potential to become a self-powered photodetector and displays good stability and a fast response speed under various light intensities and different voltages.
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