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Effect of Gate Bias and Channel Length on Total Dose Effect in FinFET Bulk Silicon Devices |
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期刊:2025 10th International Symposium on Advances in Electrical, Electronics and Computer Engineering (ISAEECE) 作者:Xiaodong Zhao; Fan Yang; Xun-Ying Zhang; Hongxia Wang; Yuan-Yuan Cui 出版日期:2025-06-20 |
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(2025-6-4)