Trends in performance characteristics and modelling of oxide based TFT

This paper reviews Thin Film Transistors (TFTs) and its performance characteristics. Specific focus has been given on the performance characteristics of oxide based TFT because of the wide range of applications of such TFT's. The oxide TFT devices are having excellent potential in the near future as active matrix displays. Due to fast expansion of electronics industry, modelling of TFT's and ability to simulate the circuit behavior prior to production is important. The parameters such as grain boundary defect, mobility, on-off current ratio, thermal stability etc. are important factors need to consider and capture while modeling. This paper also finally discusses the importance of programming voltage, process temperature charge leakage and storage capacity of memory devices.