Wafer-Scale Demonstration of High-Voltage β -Ga 2 O 3 MOSFETs With Excellent Uniformity and >3kV Breakdown Capability

This study demonstrates a wafer-scale growth of a 2-in, Si-doped$\beta $-Ga2O3(100) epitaxial wafer and the realization of uniform, high-voltage lateral$\beta $-Ga2O3MOSFET arrays. The 2-in homoepitaxial$\beta $-Ga2O3(100) film grown by metal-organic chemical vapor deposition (MOCVD) exhibits excellent crystalline uniformity with an average rocking curve full width at half maximum (FWHM) of ~27.0 arcsec and a low surface roughness of less than 1nm, alongside a uniform net doping concentration of$4.60\times 10^{{17}}$cm-3. The representative MOSFET delivers a threshold voltage of −31.75V, a drain-currenton/offratio$\gt10^{{9}}$, a specificon-resistance of 126.52m$\Omega \cdot $cm2and a breakdown voltage exceeding 3kV. Statistical analysis across the entire wafer confirms good device uniformity, with threshold voltages ranging from −28 to −36V, output current densities of$60\sim 75$mA/mm, and a breakdown voltage over 3kV. These results provide the demonstration using the 2-in$\beta $-Ga2O3epitaxial wafer to realize high-voltage$\beta $-Ga2O3MOSFETs with wafer-scale performance uniformity for industrial-level device application.