The on-resistance limits of high cell density power MOSFET's

In this paper, the on-resistance limits of low-voltage power VDMOSFET's and trench power MOSFET's are studied, based on an analytical approach and 2D device modelling. It is shown that, unlike VDMOSFET, the trench MOSFET performance is not limited by the "JFET effect". From a theoretical point of view, for N-channel devices, the 60 V optimized trench MOSFET would present a specific on-resistance equal to 0.32 m/spl Omega/.cm/sup 2/ while the equivalent VDMOSFET would present a specific on-resistance of 0.51 m/spl Omega/.cm/sup 2/.