Hybrid all-SiC MOS-gated bipolar transistor (MGT)

A MOS-gated bipolar transistor structure (called MGT), which consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration, is experimentally demonstrated in SiC in hybrid form with a 6H-SiC lateral RESURF MOSFET driving high-voltage 4H-SiC implanted-emitter BJT. SiC MGT has several advantages over SiC IGBT, such as wider Safe Operation Area (SOA) as well as faster switching. The hybrid transistor has a forward drop of 5 V at 50 A/cm/sup 2/ and rise and fall times of 0.8 /spl mu/s and 2.5 /spl mu/s, respectively.