范德瓦尔斯力
材料科学
铁磁性
自旋电子学
反铁磁性
磁性
凝聚态物理
磁电阻
联轴节(管道)
感应耦合
纳米技术
化学物理
磁场
复合材料
工程类
物理
电气工程
有机化学
化学
量子力学
分子
作者
Xiaoqian Zhang,Wenqing Liu,Wei Niu,Qiangsheng Lu,Wei Wang,Ali Sarikhani,Xiaohua Wu,Chunhui Zhu,Jiabao Sun,Mitchel Vaninger,P. F. Miceli,Jianqi Li,David J. Singh,Y. S. Hor,Yüe Zhao,Chang Liu,Liang He,Rong Zhang,Guang Bian,Dapeng Yu
标识
DOI:10.1002/adfm.202202977
摘要
Abstract One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr 5 Te 8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.
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