材料科学
掺杂剂
兴奋剂
自旋电子学
磁性半导体
半导体
化学气相沉积
光致发光
锰
顺磁性
电子顺磁共振
纳米技术
过渡金属
光电子学
凝聚态物理
铁磁性
核磁共振
化学
催化作用
物理
冶金
生物化学
作者
Mohamad Hasan Aleinawi,Ameen Uddin Ammar,Merve Buldu-Akturk,Nur Selin Turhan,Shankari Nadupalli,Emre Erdem
标识
DOI:10.1021/acs.jpcc.2c00009
摘要
Dilute magnetic semiconductors such as transition-metal-doped ZnO are potential candidates for spintronic applications. Transition metals such as Mn, Fe, and Cu when doped in ZnO enable spin magnetic properties to conventional semiconductors. Although several techniques such as wet chemical and vapor deposition methods are employed to achieve homogeneous doping in ZnO, these methods have limits pertaining to solubility levels of dopant ion, morphology, competition between intrinsic and extrinsic defects and localization of the defect species. This manuscript is an addition to the vast knowledge of methods and protocols that present the synthesis of transition-metal-doped ZnO. In this report, manganese-doped ZnO is synthesized via a microwave-assisted hydrolysis technique. The defect structure of Mn-doped ZnO wires is investigated via electron paramagnetic resonance and photoluminescence techniques. The analysis indicates that Mn2+ substitutes the Zn ion and dominates the intrinsic defect species in ZnO.
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