5W High-power High-linearity L-band InGaP/GaAs HBT PA MMIC for RDSS Applications

With the expansion of China's Beidou Navigation Satellite System on global scale, high output power, high efficiency, and high linearity power amplifiers for RDSS (Radio Determination Satellite Service) have been required. In this paper, an RDSS PA (Power Amplifier) is designed with GaAs HBT (Heterojunction Bipolar Transistor) technology and packaged with LGA (Land Grid Array) technology. The proposed PA adopts a temperature-insensitive bias circuit, an output matching circuit with harmonic suppression, as well as a predistortion circuit that improves the linearity. The PA works within the 1.6∼1.65 GHz bandwidth, its linear gain is 38.02 dB, the gain flatness is ±0.08 dB, and the input and output SWR (Standing Wave Ratio) is less than 1.22:1 and 1.98:1, respectively; P1dB is 37.28 dBm, the saturated output power is 37.84 dBm, PAE (Power Added Efficiency) is higher than 36.5%, and its second, third, and fifth order HSRs (Harmonic Suppression Ratio) are all more than −62.5 dBc. The chip size is $4\ \text{mm}\times 4\ \text{mm}\times 1\ \text{mm}$ , and the maximum junction temperature is 193.74°C. This power amplifier is suitable for various communication systems due to its high linearity, high efficiency and high integration.