Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm2/Vs, and a good Ion/Ioffratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2and higher-к TiO2.