Application of Field Plate to Increase Breakdown Voltage of DMOS
作者
Alexey S. Kluchnikov,Anton Y. Krasukov
出处
期刊:International Siberian workshops and tutorials on electron devices and materials日期:2007-07-01卷期号:: 107-108
标识
DOI:10.1109/sibedm.2007.4292926
摘要
This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.