The performance of a new positive tone novalac-based resist, SYSTEM-9, has been characterized on a Cambridge Instruments EBMF-1O.5 electron beam lithography tool. Resist characteristics and the optimum processing conditions for a variety of commercially available developers have been investigated. This resist yields relative contrasts of up to 14, sensitivities from 19 to 32 (jtC/cm2) and a good resolution of 0.2 jim. SYSTEM-9 has excellent dry etch resistance. Outstanding applications in submicron micro-electronic device fabrication are demonstrated.