Annealing of defects in after irradiation with electrons at low temperatures

films were irradiated below 10 K with electrons of four different energies (0.65 to 2.5 MeV) up to an irradiation dose of . The irradiated samples were isochronally annealed and the recovery of the radiation damage was investigated by measuring the residual electrical resistivity. Characteristic for the recovery of the resistivity is a large narrow stage centred at 100 K of which the position is independent of electron dose and electron energy. Only the height of this stage increases with decreasing irradiation dose and electron energy.