薄脆饼
蚀刻(微加工)
钝化
化学
氧化物
硅
干法蚀刻
金属
化学工程
缓冲氧化物腐蚀
材料科学
无机化学
分析化学(期刊)
反应离子刻蚀
冶金
色谱法
纳米技术
图层(电子)
有机化学
工程类
作者
Dae-Hong Eom,Ky-Sub Kim,Jin-Goo Park
摘要
The etching behavior of silicon and oxide wafers was evaluated in HF solutions with and without the addition of H2O2 and IPA. The etch rates of SiO2 and Si were dependent on the concentrations of additives such as H2O2 and IPA in HF solution. As the concentration of H2O2 increased, the etch rates of SiO2 and Si increased. However, the etch rate of SiO2 decreased as the concentration of IPA increased in HF solutions. The etch rate of SiO2 in HF–H2O2–IPA solution was very similar to that in HF–IPA solutions. The etch rate was predominantly dependent on IPA concentration and not on H2O2 concentration. Particulate and metallic contamination removal efficiencies were evaluated in dilute HF solutions were added to which H2O2 and IPA. Fumed silica and Al2O3 particles were effectively removed in HF–H2O2–IPA. Cu removal efficiency from wafer surfaces markedly increased as the IPA and H2O2 were added into HF solution.
科研通智能强力驱动
Strongly Powered by AbleSci AI