Pyroelectric properties of AlN

Pyroelectric properties of high-quality (0001)AlN films grown on (111) Si were studied. The pyroelectric coefficient p was measured using the dynamic method. The value was in the range of 6–8 μC/(m2 K), yielding a p/ε figure-of-merit of 0.8–0.95. The pyroelectric coefficient was independent of temperature and applied bias. Leakage current as low as 1–2×10−9 A/cm2 was measured at 5 V on large area devices. The obtained results indicate that AlN films can be used in pyroelectric thin-film devices.