On the mechanical strength of monocrystalline, multicrystalline and quasi‐monocrystalline silicon wafers: a four‐line bending test study

ABSTRACT Quasi‐monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favorable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski‐Si (Cz‐Si) wafers and the lower cost and the full square‐shape of the multicrystalline ones. However, the quasi‐monocrystalline ingot growth can lead to a different defect structure than the typical Cz‐Si process. Thus, the properties of the brand new quasi‐monocrystalline wafers, based on low and high crystal defect densities, have been for the first time studied from a mechanical point of view, comparing their strength with that of both Cz‐Si monocrystalline and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three‐parameter Weibull distribution. High mechanical strength was found in all the cases. However, the quasi‐monocrystalline wafers characterized by large density of bulk defects, due to the noticeable density of extended defects, showed lower fracture tensions. Copyright © 2013 John Wiley & Sons, Ltd.