Planar Ga0.47In0.53As PIN photodiodes with extremely low dark current

A PIN-type photodiode fabricated with a Ga0.47In0.53As absorbing layer is widely used in optical receivers for the 1.3-1.6-μm wavelength region. We report here a double-heteroplanar PIN photodiode with extremely low dark currents and discuss the relationship between dark current and the lattice mismatch of the GaInAs/InP heterostructure.