Resistive switching memory based on organic/inorganic hybrid perovskite materials

Abstract In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH 3 NH 3 PbI 3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin-oxide (ITO)/PMMA/CH 3 NH 3 PbI 3 /PMMA/Ag device were investigated in terms of current–voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10 3 . Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.