This paper shows a simple analysis method for the contents of polytypes in the polycrystalline SiC. Theoretical diffraction intensities of single crystals of 2H, 3C, 4H, 6H and 15R were calculated by the crystallographic data. It was assumed that the polycrystalline SiC is a mixture of these polytype grains, and X-ray diffraction intensities of polycrystalline SiC were obtained by the sum of the theoretical intensities from these polytypes. The most probable contents of polytypes could be determined by fitting the observed X-ray diffraction intensities to the theoretical ones by the multiple regression method.