Finite element simulation and experiment of residual stress evolution in MEMS structures

Abstract The MEMS device structure is usually formed by the combination of thick film and thin film deposition of many different materials, and the residual stress generated in the process of integration/superposition of different materials has a significant impact on the performance and reliability of the device.In this study, a test structure of a multilayer thin film was designed and processed. Based on this, finite element modeling analysis and reliability experiment, analyze the evolution of residual stress and construct the corresponding theoretical analysis model. The finite element modeling analysis can characterize the evolution and distribution laws of residual stress. The reliability experiment is mainly by carrying out the temperature shock experiment, and measuring the resistance value, resonance frequency and the surface morphology of the device, so as to better reflect the change of residual stress. Through this study, the resonant frequency and surface morphology of the device can reflect the residual stress of the device, which provides help for the test and analysis of the residual stress. To a certain extent, it can help reduce the harm caused by the residual stress in the design and manufacturing process, and improve the performance and reliability of MEMS devices.