铁磁性
凝聚态物理
材料科学
双层
磁化
交换偏差
磁场
磁各向异性
物理
化学
生物化学
量子力学
膜
作者
Ruobai Liu,Jiarui Chen,Zhuoyi Li,Xianyang Lu,Yu Lu,Tianyu Liu,Yiyang Zhang,Yuan Yuan,Laiming Wei,Di Wu,Bo You,Wei Zhang,Jun Du
标识
DOI:10.1021/acsami.3c12061
摘要
Spin–orbit torque (SOT)-induced magnetization switching in ferrimagnetic materials is promising for application in a new generation of information storage devices. Here, we demonstrate SOT-induced field-free magnetization switching of the perpendicularly magnetized CoTb ferrimagnet layer in the IrMn/CoTb bilayer, in which the in-plane magnetic inversion symmetry is broken by a spontaneous in-plane exchange bias (IEB) established by isothermal crystallization of the IrMn layer. We obtain a significant SOT effective field acting on the CoTb layer and a large effective spin Hall angle in this system, derived by the second harmonic voltage measurement method. Moreover, the IrMn/CoTb bilayer demonstrates multistate magnetic switching behavior with different amplitudes of current pulses at zero field, which can mimic the synaptic weight updates in the neuromorphic network. These findings make the IrMn/CoTb bilayer with spontaneous IEB a promising candidate for potential applications in multilevel storage and neuromorphic computing.
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