Near-Perfect THz Absorber with Wide Range Tunability
作者
Omnia Samy,Taiichi Otsuji,Amine El Moutaouakil
出处
期刊:日期:2023-09-17卷期号:50: 1-2被引量:2
标识
DOI:10.1109/irmmw-thz57677.2023.10298957
摘要
THz absorbers have wide applications ranging from sensors and monochromatic detectors for narrowband absorbers to shielding and energy harvesting for broadband absorbers. Designing a THz absorber with perfect absorption is a challenging topic. In this work, we present a broadband THz absorber with bandwidth ranging from 0.9 to 1.3 THz and a near-perfect absorption >90%. The absorptance frequency can be tuned using low voltage application (0.2-5 V), from 1.3 to 10 THz while maintaining high absorptivity. In comparison with other structures, this absorber is ultra-thin (20 nm – 160 nm) with a simple structure based on 2D materials (graphene, MoS2, phosphorene) without including Au or other precious materials. It is easy to fabricate, cost-effective, and voltage-tunable through nearly the whole THz region. Although the structure is a broadband absorber its fractional bandwidth ranges from 20-45% which can be enhanced to a narrowband absorber in future works.