59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator
符号
物理
数学
算法
算术
作者
Tonglin L. Newsom,Christopher Allemang,Tae H. Cho,Neil P. Dasgupta,Robert A. Peterson
出处
期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2023-01-01卷期号:44 (1): 72-75被引量:2
标识
DOI:10.1109/led.2022.3219351
摘要
Here, by depositing both the zinc tin oxide (ZTO) channel and Al2O3 gate dielectric layer using atomic layer deposition (ALD) without breaking vacuum, we made TFTs with a steep subthreshold swing ( $\textit {SS}$ ) of 59.9mV $\cdot $ dec $^{-{1}}$ , near the room temperature Boltzmann limit. An extremely low interface trap density of 9.59 $\times 10^{{9}}$ cm $^{-{2}}$ eV $^{-{1}}$ was extracted from the measured $\textit {SS}$ value, and was corroborated by the high-low frequency capacitance method. Comparison with other TFT processes shows that both the higher- ${k}$ gate dielectric and the in situ ALD process are required to obtain the low $\textit {SS}$ value. The device made with in situ dielectric deposition exhibits a maximum linear mobility of 19.2 cm $^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ , an ON/OFF current ratio > $10^{{8}}$ , and a threshold voltage of 1.3 V. The sharp $\textit {SS}$ achieved here will enable low voltage electronics using this scalable ALD technology.