低压差调节器
辍学(神经网络)
级联
噪音(视频)
低温学
材料科学
电气工程
电压
MOSFET
跌落电压
电子工程
光电子学
电压调节器
物理
工程类
计算机科学
晶体管
机器学习
图像(数学)
人工智能
量子力学
化学工程
作者
Lingyun Liu,Cheng long Liang,Zhuoqi Guo,Zhongming Xue,Li Geng
标识
DOI:10.1109/icta56932.2022.9962998
摘要
Low dropout (LDO) voltage regulators are essential for noise-sensitive circuit systems in cryogenic temperature environments. This paper characterized and modeled a full-scale BSIM4-based 180nm MOSFET at cryogenic temperature. Then, a high PSR low output noise cap-less LDO is implemented with the cascade and feed-forward current technology for cryogenic applications. At 77K, simulation results show that PSR is -98dB at 10kHz and -78dB at 100kHz, and the integrated noise is 0.82 µVrms among the frequency from 100Hz to 100kHz.
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