Resistive NO2 gas sensor based on GaN hexagonal pits at room temperature

Although fantastic milestones of Gallium nitride (GaN)-based materials in optoelectronic devices had been reached, the focus on the optimization of their geometrical structure for gas-sensing applications was relatively scarce. In this work, we demonstrated NO 2 gas sensor based on p-type GaN hexagonal pits (GaN-HP) with high surface-to-volume ratio by wet etching method. The fabricated NO 2 gas sensor had high sensitivity, high selectivity, fast response/recovery time. The response of GaN-HP with etching time for 10 min to 2 ppm NO 2 gas was 6.2%, which also have quick response and recovery time at room temperature. UV light drastically enhanced the response of GaN-HP sensor by 1.3 times to 100 ppm NO 2 . The gas sensing mechanism of GaN-HP gas sensor was explored, which provided a theoretical and experimental basis for further research and development of high-performance gas sensors based on GaN material. • A gas sensor based on p-type GaN-HP at room temperature was achieved. • The gas sensor based on p-type GaN-HP has quick response and recovery time. • UV light drastically enhanced the response of p-type GaN-HP sensor by 1.3 times to 100 ppm NO 2 .