物理
谐波
高次谐波产生
激光器
谐波
谱线
半导体
凝聚态物理
订单(交换)
计算物理学
原子物理学
光学
量子力学
财务
经济
电压
作者
Gianfranco Orlando,Min‐I Lee,Tak‐San Ho
标识
DOI:10.1088/1361-6455/ac864e
摘要
Abstract We analyze the ellipticity dependence of high order harmonic generation (HHG) in disordered semiconductors. We show that a disordered crystal can radiated HHG spectra containing only odd harmonics of the laser frequency for all values of the ellipticity of the laser. Furthermore, we show that the HHG yield of our disordered models decreases monotonically with increasing laser ellipticity as observed in recent experiments. I particular, our numerical calculations, based on a coarse grained model, reproduce many of the qualitative features of the experimental HHG spectra of ZnO and GaAs.
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