P‐15.15: Improvement of a‐IGZO TFTs Electrical Characteristics for Short Channel TFTs

The electrical characteristics of top gate a IGZO TFTs with a different Buffer SiO 2 and IGZO Deposition condition investigated and compared in this paper. To improve electrical performance of short channel (L=4um) a IGZO TFT we have been optimized Buffer SiO SiO 2 & IGZO film in carrier density and developed the IGZO Metallization method. We achieved the stable electrical characteristic by controlled carrier diffusion length. Through the Carrier Density optimization in IG ZO film, the Vth variation due to the reduction of channel length is improved from 9.7V to 0.7V.