Excellent Temperature Dependence of Retention Energy and Large Tunnel Magnetoresistance of MTJs With Strain-Induced Magnetic Anisotropy for SOT-MRAMs With High Write Efficiency

Temperature dependence of retention energy of MTJs with strain-induced magnetic anisotropy(SIMA-MTJs) were estimated by performing repeated measurements on the coercivity of the storage-layer and fitting the switching probability data obtained from them with Sharrock's formula. The retention energy of SIMA-MTJs at 85°C increased by 14% compared with that at room temperature on average. Also, over 300% of tunnel magnetoresistance(TMR) was demonstrated with 1.9nm thick storage-layer. Further, it was estimated that the switching current for 1.9nm thick storage-layer can be lowered to the level of 20μA with retention energy of 80k _B T by practically available values of interface magnetic anisotropy, K _s =1.6 erg/cm ² , and spin-Hall angle of 0.3.