激光器
材料科学
光电子学
光子晶体
光学
半导体激光器理论
激光束质量
梁(结构)
半导体光学增益
折射率
半导体
紫外线
光子学
量子阱
Crystal(编程语言)
散射
光束
可调谐激光器
红外线的
光抽运
光散射
可见光谱
光子集成电路
受激发射
量子点激光器
电磁辐射
作者
Doğukan Apaydın,Hjalmar Andersson,Lukas Uhlig,Sarina Graupeter,Joachim Ciers,Giulia Cardinali,Erik Strandberg,Tim Wernicke,Michael Kneissl,Ulrich T. Schwarz,Philippe Tassin,Åsa Haglund
标识
DOI:10.1002/lpor.202500271
摘要
Abstract Today's ultraviolet lasers are bulky, expensive, have low power‐conversion efficiency, and usually suffer from poor beam quality. Semiconductor lasers have addressed these issues in the visible and infrared parts of the electromagnetic spectrum; but in the ultraviolet, they are just starting to see the light of day. Edge‐emitting semiconductor lasers are the only ones demonstrated under electrical injection in the deep‐ultraviolet (<280 nm) and they inherently suffer from poor beam qualities, multiple modes, and catastrophic optical damage to the mirror. The first deep‐UV photonic crystal surface‐emitting lasers are demonstrated here. The devices show single‐mode emission around 279 nm with less than 1 beam divergence. They require a specific design to overcome optical scattering and the low refractive index that otherwise prohibits a 2D standing optical field. The optically pumped deep‐ultraviolet photonic crystal surface‐emitting lasers offer drastically improved beam quality and provide an important step toward low‐divergent, watt‐class, electrically‐driven UV PCSELs.
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